The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jan. 23, 2014
Seiko Instruments Inc., Chiba, JP;
Hisashi Hasegawa, Chiba, JP;
Abstract
A semiconductor device has a field insulating film formed on a semiconductor substrate, a resistor and a fuse formed on the field insulating film, a first interlayer insulating film formed on the fuse, a second interlayer insulating film formed on the first interlayer insulating film, and a third interlayer insulating film including an SOG layer and formed on the second interlayer insulating film. A passivation oxide film is formed on the third interlayer insulating film. A fuse opening is formed above the fuse and extends from the passivation oxide film to a midpoint in the second interlayer insulating film. A passivation nitride film covers the passivation oxide film and is disposed on a side surface and a bottom surface of the fuse opening. The passivation nitride film disposed on the bottom surface of the fuse opening has an opening exposing the second interlayer insulating film at the midpoint thereof.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile