The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
May. 17, 2013
Applicant:
Omnivision Technologies, Inc., Santa Clara, CA (US);
Inventors:
Hidetoshi Nozaki, Sunnyvale, CA (US);
Tiejun Dai, Santa Clara, CA (US);
Assignee:
OmniVision Technologies, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/148 (2013.01); H01L 27/1461 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14601 (2013.01); H01L 29/1079 (2013.01); H01L 29/1083 (2013.01); H01L 29/66537 (2013.01); H01L 2924/12043 (2013.01);
Abstract
An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.