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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570482 B1

PDFFull Text
Expired
Date of Patent:
Feb. 14, 2017

Filed:

Nov. 28, 2014

Manufacturing method and manufacturing equipment of thin film transistor substrate

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Xiaowen Lv, Guangdong, CN;

Wenhui Li, Guangdong, CN;

Longqiang Shi, Guangdong, CN;

Chih-yu Su, Guangdong, CN;

Chih-yuan Tseng, Guangdong, TW;

Assignee:

Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;

Attorney:

Andrew C. Cheng

Primary Examiner:

Zandra Smith

Assistant Examiner:

Evan Clinton

Int. Cl.
CPC ...
H01L 21/16 (2006.01); H01L 27/12 (2006.01); H01L 21/77 (2006.01); H01L 29/786 (2006.01); C23C 30/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1262 (2013.01); C23C 30/00 (2013.01); H01L 21/77 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 2021/775 (2013.01); H01L 2227/323 (2013.01);
Abstract

A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

Find Patent Forward Citations

Lv, Xiaowen. (2017). Manufacturing method and manufacturing equipment of thin film transistor substrate (U.S. Patent No. 9570482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570482

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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