The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 24, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youn-Seok Choi, Seoul, KR;
Young-min Ko, Hwaseong-si, KR;
Honggun Kim, Hwaseong-si, KR;
Jongmyeong Lee, Seongnam-si, KR;
Byoungdeog Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method for manufacturing a semiconductor device includes forming a storage node hole passing through an upper support layer, a bowing prevention layer and an upper mold layer using a dry etching process, forming a lower electrode in the storage node hole, patterning the upper support layer and the bowing prevention layer to expose a portion of the upper mold layer, removing the upper mold layer and at least a portion of the bowing prevention layer using a first wet etching process, and sequentially forming a dielectric layer and an upper electrode that cover the lower electrode. An etch rate of the bowing prevention layer may be substantially equal to an etch rate of the upper support layer during the dry etching process. An etch rate of the bowing prevention layer may be higher than an etch rate of the upper support layer during the first wet etching process.