The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 22, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/26513 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/823456 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 21/02255 (2013.01); H01L 21/823462 (2013.01); H01L 27/0922 (2013.01);
Abstract
A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.