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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570436 B1

PDFFull Text
Expired
Date of Patent:
Feb. 14, 2017

Filed:

Jun. 05, 2013

Semiconductor device

Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Akira Nakajima, Ibaraki, JP;

Shinichi Nishizawa, Ibaraki, JP;

Hiromichi Ohashi, Ibaraki, JP;

Assignee:

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorneys:

Pergament & Cepeda LLP

Milagros A. Cepeda

Edward D. Pergament

Primary Examiner:

Long K Tran

Assistant Examiner:

Thai T Vuong

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 29/16 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/808 (2006.01); H01L 29/04 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/47 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/049 (2013.01); H01L 21/0455 (2013.01); H01L 27/0248 (2013.01); H01L 27/0255 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/1075 (2013.01); H01L 29/1083 (2013.01); H01L 29/1087 (2013.01); H01L 29/1608 (2013.01); H01L 29/41725 (2013.01); H01L 29/66068 (2013.01); H01L 29/7787 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/7841 (2013.01); H01L 29/8083 (2013.01); H01L 29/872 (2013.01); H01L 29/1066 (2013.01); H01L 29/1602 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/475 (2013.01);
Abstract

The present invention provides a semiconductor device that prevents destruction due to an avalanche breakdown and that has a high tolerance against breakdown by configuring the device so as to have a punch-through breakdown function therein and such that the breakdown voltage of a punch-through breakdown is lower than an avalanche breakdown voltage so that an avalanche breakdown does not occur.

Find Patent Forward Citations

Nakajima, Akira. (2017). Semiconductor device (U.S. Patent No. 9570436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570436

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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