The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 19, 2015
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventor:
Tatsuo Morita, Tokyo, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/02 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0248 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 27/0605 (2013.01); H01L 29/0692 (2013.01); H01L 29/1066 (2013.01);
Abstract
A semiconductor element is provided which does not break down by avalanche current. A surge protection element includes: a semiconductor multi-layer comprising a nitride semiconductor; a first p-type semiconductor and a second p-type semiconductor which are disposed above the semiconductor multi-layer; a first electrode disposed above the first p-type semiconductor; and a second electrode disposed above the second p-type semiconductor.