The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570432 B1

Date of Patent:

Feb. 14, 2017

Filed:

Jun. 01, 2015

Semiconductor device with inverters having transistors formed in different active regions

Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Mamoru Nishizaki, Tokyo, JP;

Assignee:

Longitude Semiconductor S.a.r.l., Luxembourg, LU;

Attorney:

Primary Examiner:

Tram H Nguyen

Int. Cl.

CPC ...

H01L 27/148 (2006.01); H01L 27/02 (2006.01); H01L 27/085 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0207 (2013.01); H01L 27/085 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/10873 (2013.01);

Abstract

A semiconductor device has a first and second transistors formed on an active region defined by an insulating region. The active region is divided into a first and second portions arranged in a first direction, and into a third and fourth portions interposed between the first portion and the second portion, and provided adjacent to each other in a second direction orthogonal to the first direction. The first transistor is provided in the first and third portions, and the second transistor is provided in the second and fourth portions.

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Nishizaki, Mamoru. (2017). Semiconductor device with inverters having transistors formed in different active regions (U.S. Patent No. 9570432). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570432

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