The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Sep. 02, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Satoshi Tsukiyama, Yokohama Kanagawa, JP;

Masatoshi Fukuda, Yokohama Kanagawa, JP;

Yukifumi Oyama, Yokkaichi Mie, JP;

Shinya Fukayama, Nagoya Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H01L 23/544 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 23/544 (2013.01); H01L 24/11 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54473 (2013.01); H01L 2224/10135 (2013.01); H01L 2224/1131 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/1415 (2013.01); H01L 2224/14505 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/1705 (2013.01); H01L 2224/17517 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8113 (2013.01); H01L 2224/81139 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81194 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81862 (2013.01); H01L 2224/81907 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/35 (2013.01);
Abstract

According to one embodiment, a first electrode is formed on a first face of a first semiconductor chip, and a second electrode and a protrusion are formed on a second face of a second semiconductor chip. The first semiconductor chip and the second semiconductor chip are spaced from one another by the protrusion in such a manner that the first face and the second face face each other. The first semiconductor chip and the second semiconductor chip are subject to reflow to be electrically connected to each other, and then the protrusion is cured at a temperature lower than a reflow temperature.


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