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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570412 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Apr. 01, 2016

Semiconductor device

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Yoshimasa Yoshioka, Shiga, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01L 23/52 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/7682 (2013.01); H01L 23/3192 (2013.01); H01L 24/13 (2013.01); H01L 23/3114 (2013.01); H01L 23/525 (2013.01); H01L 24/03 (2013.01); H01L 2224/024 (2013.01); H01L 2224/02123 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02335 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13024 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor device includes a first metal wiring formed on a semiconductor substrate, a first organic insulating film formed on the first metal wiring, and a second metal wiring formed to cover the first organic insulating film and having a via connected to the first metal wiring. The semiconductor device further includes a second organic insulating film formed on the first organic insulating film and having an opening to expose the second metal wiring, a bump formed on an exposed portion of the second metal wiring in the opening, and a tunnel portion formed in contact with the second metal wiring or the first organic insulating film. The tunnel portion overlaps with the second metal wiring in planar view.

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