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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570411 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Oct. 23, 2015

Pad structure of a semiconductor device, method of manufacturing the pad structure and semiconductor package including the pad structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Nam-Gyu Baek, Namyangju-si, KR;

Young-Min Lee, Asan-si, KR;

Yun-Rae Cho, Hwaseong-si, KR;

Sun-Dae Kim, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Jessica Manno

Assistant Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/563 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/3192 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05085 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/08113 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/45099 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/181 (2013.01); H01L 2924/182 (2013.01);
Abstract

A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.

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