The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

May. 08, 2012
Applicants:

Atsushi Ogasawara, Hanno, JP;

Koji Ito, Hanno, JP;

Kazuhiko Ito, Hanno, JP;

Koya Muyari, Hanno, JP;

Inventors:

Atsushi Ogasawara, Hanno, JP;

Koji Ito, Hanno, JP;

Kazuhiko Ito, Hanno, JP;

Koya Muyari, Hanno, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 23/31 (2006.01); C03C 8/02 (2006.01); C03C 8/04 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); C03C 3/085 (2006.01); C03C 3/087 (2006.01); C03C 3/093 (2006.01); C03C 8/24 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); C03C 3/085 (2013.01); C03C 3/087 (2013.01); C03C 3/093 (2013.01); C03C 8/02 (2013.01); C03C 8/04 (2013.01); C03C 8/24 (2013.01); H01L 21/02112 (2013.01); H01L 21/02161 (2013.01); H01L 21/02318 (2013.01); H01L 21/56 (2013.01); H01L 23/291 (2013.01); H01L 23/3107 (2013.01); H01L 23/3178 (2013.01); H01L 29/0615 (2013.01); H01L 29/0661 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); C03C 2207/00 (2013.01); H01L 23/3171 (2013.01); H01L 23/4952 (2013.01); H01L 23/49551 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A resin-sealed semiconductor deviceof the present invention includes: a mesa-type semiconductor elementwhich includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resinwhich seals the mesa-type semiconductor element, wherein the mesa-type semiconductor elementincludes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.


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