The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Apr. 01, 2014
Ji Pang, Santa Clara, CA (US);
Daniel NG, Campbell, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Xiaobin Wang, San Jose, CA (US);
Ji Pang, Santa Clara, CA (US);
Daniel Ng, Campbell, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Xiaobin Wang, San Jose, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed in a top portion of the gate trench by an inter-electrode insulation layer. At least one of the transistor cells includes the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile