The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 26, 2015
International Business Machines Corporation, Armonk, NY (US);
Todd A. Christensen, Rochester, MN (US);
John E. Sheets, II, Zumbrota, MN (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments herein describe dummy gates disposed over a portion of a fin in finFETs. That is, instead of separating the dummy gates from the finFET structure, the fins may be extended and covered, at least partially, by the dummy gates. An insulative material is disposed between the dummy gate and the fin in order to form a decoupling capacitor. In one embodiment, the dummy gate overlaps a portion of the fin that is held at a voltage rail. Moreover, the dummy gate may be coupled to a different (e.g., opposite) voltage rail than rail coupled to the fin. For example, if the fin is coupled to Vthen the dummy gate is coupled to V, or vice versa. Thus, the capacitor formed using the fin and the dummy gate provides a decoupling capacitance between the power sources generating the voltage rails (i.e., Vand V).