The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

May. 10, 2016
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventor:

Kazuya Yamaguchi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76804 (2013.01); H01L 21/76829 (2013.01); H01L 21/76846 (2013.01); H01L 21/76856 (2013.01); H01L 21/76864 (2013.01); H01L 21/76871 (2013.01); H01L 23/53252 (2013.01); H01L 29/401 (2013.01);
Abstract

A barrier metal is formed from a surface of an interlayer insulating filmto a trench that is formed in a semiconductor portion exposed in a contact hole. After RTA treatment and a plasma nitriding process, a plug is embedded at an inner side of the barrier metal inside the trench and the contact hole. The RTA treatment is performed at a temperature range of about 500 degrees C. to 650 degrees C. The plasma nitriding process is performed at a temperature lower than that of the RTA treatment. The barrier metal is formed by a first metal film of titanium and a second metal film of titanium nitride sequentially stacked. The plug is formed from tungsten. A surface electrode formed of aluminum is formed from a surface of the second metal film on the interlayer insulating film to a surface of the plug.


Find Patent Forward Citations

Yamaguchi, Kazuya. (2017). Method of manufacturing semiconductor device (U.S. Patent No. 9570346). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570346

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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