The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

May. 21, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Mong-sup Lee, Hwaseong-si, KR;

Sang-jun Lee, Incheon, KR;

Yoon-ho Son, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a first conductive structure on a substrate, forming an insulation layer on a sidewall of the first conductive structure, forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween, first removing a portion of the insulation layer by performing a first dry cleaning operation, second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation, and third removing at least a portion of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.


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