The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Mar. 02, 2015
Ashwini K. Sinha, East Amherst, NY (US);
Stanley M. Smith, Clarence Center, NY (US);
Douglas C. Heiderman, Akron, NY (US);
Serge M. Campeau, Lancaster, NY (US);
Ashwini K. Sinha, East Amherst, NY (US);
Stanley M. Smith, Clarence Center, NY (US);
Douglas C. Heiderman, Akron, NY (US);
Serge M. Campeau, Lancaster, NY (US);
PRAXAIR TECHNOLOGY, INC., Danbury, CT (US);
Abstract
A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.