The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Mar. 11, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hideyuki Sugiyama, Kawasaki, JP;

Tetsufumi Tanamoto, Kawasaki, JP;

Mizue Ishikawa, Yokohama, JP;

Tomoaki Inokuchi, Yokohama, JP;

Yoshiaki Saito, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H03K 19/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/165 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H03K 19/16 (2013.01);
Abstract

A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.


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