The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Nov. 10, 2015
Applicant:
Tohoku University, Aoba-ku, Sendai, Miyagi, JP;
Inventors:
Shigetoshi Sugawa, Sendai, JP;
Rihito Kuroda, Sendai, JP;
Assignee:
TOHOKU UNIVERSITY, Mayagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01J 3/28 (2006.01); H01L 27/146 (2006.01); H01L 31/06 (2012.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
G01J 3/2803 (2013.01); G01J 3/2823 (2013.01); H01L 27/1446 (2013.01); H01L 27/14601 (2013.01); H01L 27/14609 (2013.01); H01L 27/14643 (2013.01); H01L 31/06 (2013.01); H01L 31/103 (2013.01); H01L 31/18 (2013.01); G01J 2003/2813 (2013.01); Y02E 10/50 (2013.01);
Abstract
Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light.