The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Feb. 02, 2011
Applicants:
Hideo Takami, Ibaraki, JP;
Atsushi Nara, Ibaraki, JP;
Shin-ichi Ogino, Ibaraki, JP;
Inventors:
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); C23C 14/14 (2006.01); C23C 14/08 (2006.01); H01J 37/34 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); G11B 5/851 (2006.01);
U.S. Cl.
CPC ...
C23C 14/14 (2013.01); C23C 14/0617 (2013.01); C23C 14/0688 (2013.01); C23C 14/083 (2013.01); C23C 14/3414 (2013.01); G11B 5/851 (2013.01); H01J 37/3426 (2013.01);
Abstract
Provided is a sputtering target containing SiOfor a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.