The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jan. 03, 2012
Applicants:
Yoji Arita, Kanagawa, JP;
Takashi Yoneda, Toyama, JP;
Inventors:
Yoji Arita, Kanagawa, JP;
Takashi Yoneda, Toyama, JP;
Assignee:
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C01B 33/037 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
C01B 33/037 (2013.01); C01B 33/02 (2013.01); H01L 31/182 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract
A process for producing silicon which comprises: bringing molten silicon containing an impurity into contact with molten salt in a vessel to react the impurity contained in the molten silicon with the molten salt; removing the impurity from the system.