The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Nov. 06, 2014
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Jochen Reinmuth, Reutlingen, DE;

Julian Gonska, Reutlingen, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0038 (2013.01); B81B 3/0051 (2013.01); B81C 1/00238 (2013.01); B81C 1/00285 (2013.01); B81C 2203/0792 (2013.01); H01L 2924/16235 (2013.01);
Abstract

A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device includes a CMOS wafer having a front side and a rear side, a rewiring device formed on the front side of the CMOS wafer including a plurality of stacked printed conductor levels and insulation layers, an MEMS wafer having a front side and a rear side, a micromechanical sensor device formed across the front side of the MEMS wafer, a bond connection between the MEMS wafer and the CMOS wafer, a cavern between the MEMS wafer and the CMOS wafer, in which the sensor device is hermetically enclosed, and an exposed getter layer area applied to at least one of the plurality of stacked printed conductor levels and insulation layers.


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