The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 06, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Kenichiro Toratani, Kanagawa-ken, JP;
Fumiki Aiso, Kanagawa-ken, JP;
Takashi Nakao, Kanagawa-ken, JP;
Kazuhei Yoshinaga, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B08B 5/00 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
B08B 5/00 (2013.01); C23C 16/4405 (2013.01); C23C 16/45514 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01);
Abstract
An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.