The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

May. 06, 2015
Applicants:

Xiuwen Tu, San Jose, CA (US);

David Aitan Soltz, San Jose, CA (US);

Michael C. Johnson, Alameda, CA (US);

Seung Bum Rim, Pala Alto, CA (US);

Taiqing Qiu, Los Gatos, CA (US);

Yu-chen Shen, Sunnyvale, CA (US);

Kieran Mark Tracy, San Jose, CA (US);

Inventors:

Xiuwen Tu, San Jose, CA (US);

David Aitan Soltz, San Jose, CA (US);

Michael C. Johnson, Alameda, CA (US);

Seung Bum Rim, Pala Alto, CA (US);

Taiqing Qiu, Los Gatos, CA (US);

Yu-Chen Shen, Sunnyvale, CA (US);

Kieran Mark Tracy, San Jose, CA (US);

Assignee:

SunPower Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); H02S 50/15 (2014.01);
U.S. Cl.
CPC ...
H02S 50/15 (2014.12); G01N 21/6489 (2013.01); G01N 2201/0621 (2013.01);
Abstract

Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.


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