The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jun. 03, 2014
Applicant:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Inventors:

Adam M. White, Belvidere, IL (US);

Joshua S. Parkin, Loves Park, IL (US);

Christopher J. Courtney, Janesville, WI (US);

Assignee:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); H02M 3/325 (2006.01); H02M 7/5387 (2007.01); H02M 7/487 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H02M 3/325 (2013.01); H02M 7/487 (2013.01); H02M 7/5387 (2013.01); H02M 2001/0054 (2013.01); Y02B 70/1491 (2013.01);
Abstract

A phase leg for a multilevel inverter includes a positive DC lead, a first outer MOSFET connected to the positive DC lead, a first inner IGBT connected to the first outer MOSFET, a second inner IGBT connected to the first inner IGBT, and a second outer IGBT connected to the second inner IGBT. The first and second outer MOSFETs are superjunction MOSFETs voltage balanced by the first and second IGBTs for reducing voltage stress in the solid-state switch phase leg when the superjunction MOSFET and the IGBT are conducting current from the DC lead to the AC lead.


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