The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 30, 2015
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Guan-Hong Li, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Yuan-Hao Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
An light emitting diode includes an insulating substrate, a P-type semiconductor layer, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, and a first electrode, and a second electrode. The P-type semiconductor layer is located on the insulating substrate. The semiconductor carbon nanotube layer is located on the P-type semiconductor layer. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer. The first electrode is electrically connected to the P-type semiconductor layer. The second electrode is electrically connected to the semiconductor carbon nanotube layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile