The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Sep. 03, 2015
Applicant:

Hgst Netherlands B.v., Amsterdam, NL;

Inventors:

Jeffrey Lille, Sunnyvale, CA (US);

Luiz M. Franca-Neto, Sunnyvale, CA (US);

Assignee:

HGST NETHERLANDS B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1246 (2013.01); G11C 11/5678 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 27/2445 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to electronic devices, and more specifically, to multi-level phase change devices. In one embodiment, a memory cell device is provided. The memory cell device generally includes a top surface, a bottom surface and a cell body between the top surface and the bottom surface. The cell body may include a plurality of phase change material layers, which may be used to store data of the cell. In another embodiment, a method of programming a memory cell is provided. The method generally may include applying a sequence of different pulses to each phase change material layer of the cell as the voltage of each pulse in the sequence is ratcheted down from the start of a write cycle to the end of a write cycle.


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