The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Nov. 20, 2015
Applicant:
Hgst Netherlands B.v., Amsterdam, NL;
Inventors:
Young-Suk Choi, Los Gatos, CA (US);
Kurt Allan Rubin, San Jose, CA (US);
Derek Stewart, Livermore, CA (US);
Assignee:
HGST Netherlands B.V., Amsterdam, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
Embodiments of the present disclosure generally relate to memory devices having enhanced perpendicular magnetic anisotropy. The memory device includes a plurality of first leads, a plurality of second leads, and a plurality of memory cells having a plurality of magnetic layers and a tunneling barrier layer. An interfacial layer is incorporated in each memory cell between one of the magnetic layers and the tunneling barrier layer to enhance perpendicular magnetic anisotropy, while preserving high tunneling magnetoresistance.