The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
May. 25, 2012
Applicants:
Jeffry Kelber, Denton, TX (US);
MI Zhou, Denton, TX (US);
Inventors:
Jeffry Kelber, Denton, TX (US);
Mi Zhou, Denton, TX (US);
Assignee:
UNIVERSITY OF NORTH TEXAS, Denton, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); C01B 31/04 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); C01B 31/0446 (2013.01); H01L 21/0237 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); C01B 2204/04 (2013.01); H01L 27/222 (2013.01);
Abstract
A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal layer of cobalt or nickel is grown on an interconnect or conductive array line of e.g., copper. The metal layer is formed by electron beam irradiation. Annealing at UHV at temperatures below 700K yields a carbon segregation that forms a few layer thick (average density 3.5 ML) graphene film on the metal layer. Formation of a second layer of metal on top of the graphene barrier layer yields a high performance MTJ.