The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Mar. 11, 2016
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
Paul Loscutoff, Castro Valley, CA (US);
Seung Rim, Palo Alto, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0368 (2006.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); H01L 31/022458 (2013.01); H01L 31/03682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01);
Abstract
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.