The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Aug. 18, 2014
Applicant:
The Boeing Company, Huntington Beach, CA (US);
Inventors:
Dhananjay M. Bhusari, North Hills, CA (US);
Daniel C. Law, Arcadia, CA (US);
Assignee:
The Boeing Company, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/0693 (2012.01); H01L 21/20 (2006.01); H01L 31/0687 (2012.01); H01L 31/18 (2006.01); H01L 31/043 (2014.01); H01L 21/18 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0693 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 29/205 (2013.01); H01L 31/043 (2014.12); H01L 31/0687 (2013.01); H01L 31/1844 (2013.01); H01L 31/1892 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract
The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.