The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Sep. 17, 2010
Applicants:

Adrian Bruce Turner, Palo Alto, CA (US);

Oliver Schultz-wittmann, Sunnyvale, CA (US);

Denis DE Ceuster, Woodside, CA (US);

Douglas E. Crafts, Los Gatos, CA (US);

Inventors:

Adrian Bruce Turner, Palo Alto, CA (US);

Oliver Schultz-Wittmann, Sunnyvale, CA (US);

Denis De Ceuster, Woodside, CA (US);

Douglas E. Crafts, Los Gatos, CA (US);

Assignee:

TETRASUN, INC., San Jose, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); H01L 31/02168 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.


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