The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Mar. 22, 2011
Kyung-bae Park, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jong-baek Seon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Bon-won Koo, Suwon-si, KR;
Kyung-Bae Park, Seoul, KR;
Myung-Kwan Ryu, Yongin-si, KR;
Jong-Baek Seon, Yongin-si, KR;
Sang-Yoon Lee, Seoul, KR;
Bon-Won Koo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.