The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Apr. 24, 2013
Fujitsu Limited, Kawasaki-shi, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a first semiconductor layer of a first conductivity type formed on one side of a semiconductor substrate; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer; a third semiconductor layer of the first conductivity type formed on the second semiconductor layer; an opening part formed by removing part of the first to third semiconductor layers; a gate insulating film formed so as to cover an inner wall of the opening part; a gate electrode formed inside the opening part via the gate insulating film; a source electrode formed on a surface of the third semiconductor layer; a drain electrode connected to a part corresponding to the gate electrode on another side of the semiconductor substrate; and a fourth electrode formed on the another side of the semiconductor substrate at a part corresponding to the source electrode.