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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9564516 B1

PDFFull Text
Date of Patent:
Feb. 07, 2017

Filed:

Jan. 22, 2015

Method of making integrated mosfet-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltage

Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventor:

Ji Pan, San Jose, CA (US);

Assignee:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Attorneys:

Chein-Hwa Tsao

Lance A. Li

5Suns

Primary Examiner:

Minh-Loan Tran

Assistant Examiner:

Farid Khan

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66734 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/4236 (2013.01); H01L 29/66128 (2013.01); H01L 29/66143 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/7806 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 21/26586 (2013.01); H01L 21/28238 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/47 (2013.01);
Abstract

A MOSFET device and fabrication method are disclosed. The MOSFET has a drain in chip plane with an epitaxial layer overlay atop. The MOSFET further comprises: a Kelvin-contact body and an embedded Kelvin-contact source; a trench gate extending into the epitaxial layer; a lower contact trench extending through the Kelvin-contact source and at least part of the Kelvin-contact body defining respectively a vertical source-contact surface and a vertical body-contact surface; a patterned dielectric layer atop the Kelvin-contact source and the trench gate; a patterned top metal layer. As a result: a planar ledge is formed atop the Kelvin-contact source; the MOSFET device exhibits a lowered body Kelvin contact impedance and, owing to the presence of the planar ledge, a source Kelvin contact impedance that is lower than an otherwise MOSFET device without the planar ledge; and an integral parallel Schottky diode is also formed.

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