The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Oct. 30, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Mattias E. Dahlstrom, Los Alto, CA (US);
Dinh Dang, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Ramana M. Malladi, Williston, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 23/367 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 23/367 (2013.01); H01L 23/3677 (2013.01); H01L 23/373 (2013.01); H01L 29/0821 (2013.01); H01L 29/7371 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.