The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jun. 25, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Takeshi Aoki, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 23/532 (2006.01); H01L 27/146 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 23/552 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 27/14698 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion.


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