The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Sep. 13, 2012
Ajey P. Jacob, Albany, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Kerem Akarvardar, Saratoga Springs, NY (US);
Ajey P. Jacob, Albany, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Kerem Akarvardar, Saratoga Springs, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein involves forming a first fin for a first FinFET device in and above a semiconducting substrate, wherein the first fin is comprised of a first semiconductor material that is different from the material of the semiconducting substrate and, after forming the first fin, forming a second fin for a second FinFET device that is formed in and above the semiconducting substrate, wherein the second fin is comprised of a second semiconductor material that is different from the material of the semiconducting substrate and different from the first semiconductor material.