The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

May. 24, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;

Inventors:

Gyoo Wan Han, Yongin-Si, KR;

Vladimir Tokarev, Hwaseong-Si, KR;

Je Kil Ryu, Yongin-Si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01);
Abstract

A method of excimer laser annealing includes generating a focused long line beam with a laser beam output from at least one laser source; and scanning the long line beam in a direction perpendicular to a long axis of the long line beam along a surface of an amorphous semiconductor film on a substrate. The long line beam has a normalized beam angular divergence half-width φ=arctan(tan θ/sin θ) that is less than a critical value φ, where θrepresents a beam angular divergence half-width measured along the long axis of the long line beam on the surface of the amorphous semiconductor film, θ represents a mean incidence angle of the long line beam on the surface of the amorphous semiconductor film, and φis approximately 30°.


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