The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
May. 11, 2016
Incheon University Industry Academic Cooperation Foundation, Incheon, KR;
Sung-Hun Jin, Gyeonggi-do, KR;
Abstract
A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer on the thermal oxide layer, depositing an oxide layer on the nickel thin layer, depositing a metallic layer on the oxide layer, and patterning the metallic layer to form a gate electrode, depositing a gate insulating layer on the gate electrode, changing a surface of the gate insulating layer into a hydrophilic surface, and washing and drying the gate insulting layer, coating a single-wall nanotube on the hydrophilic surface of the gate insulating layer, forming source and drain electrodes by forming a contact opening with respect to the gate insulating layer, attaching a thermal release tape after removing a surrounding single-wall nanotube, performing a transfer onto a polyvinyl alcohol thin layer after etching the nickel thin layer, and releasing the thermal release.