The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 21, 2015
Postech Academy-industry Foundation, Gyeongsangbuk-do, KR;
Jun Hyuk Park, Gyeonggi-do, KR;
Jong Kyu Kim, Gyeongsangbuk-do, KR;
Sun Yong Hwang, Jeollanam-do, KR;
POSTECH ACADEMY-INDUSTRY FOUNDATION, Gyeonsangbuk-Do, KR;
Abstract
Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the nitride seed on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nanotunnel using the nanowire pattern as a template on the nitride seed, and using the nanotunnel as an induced growth mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile