The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 22, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong Yul Lee, Yongin-si, KR;
Sang Heon Han, Suwon-si, KR;
Seung Hyun Kim, Seoul, KR;
Jang Mi Kim, Seoul, KR;
William Solari, Hwaseong-si, KR;
Hyun Wook Shim, Suwon-si, KR;
Suk Ho Yoon, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C23C 16/34 (2013.01); C23C 16/4404 (2013.01); H01L 21/0262 (2013.01); H01L 21/02107 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02496 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 33/007 (2013.01);
Abstract
A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.