The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Aug. 21, 2015
Applicant:
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Philippe Candelier, Saint Mury Monteymond, FR;
Joel Damiens, Le Touvet, FR;
Elise Le Roux, Grenoble, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 27/12 (2006.01); H01L 27/112 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
G11C 17/165 (2013.01); G11C 17/18 (2013.01); H01L 27/101 (2013.01); H01L 27/11206 (2013.01);
Abstract
A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.