The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

May. 25, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Venkatasubramanian Narayanan, San Diego, CA (US);

Alex Dongkyu Park, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/417 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); H01L 27/1116 (2013.01);
Abstract

A static random access memory (SRAM) includes a first bitcell and a second bitcell. The first bitcell includes an aging transistor and the second bitcell includes a non-aging transistor. An aging sensor is coupled between the first bitcell and the second bitcell to determine an amount of aging associated with the aging transistor. In one aspect, the amount of aging associated with the aging transistor is determined based on a difference between a voltage or current associated with the aging transistor and a voltage or current associated with the non-aging transistor.


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