The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Dec. 25, 2014
Applicant:

Richard Landry Gray, Saratoga, CA (US);

Inventor:

Richard Landry Gray, Saratoga, CA (US);

Assignee:

BEIJING EFFILED OPTO-ELECTRONICS TECHNOLOGY CO., LTD, Song Fang Yuan, Shangdixili, Haidian Dist., Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 33/08 (2006.01);
U.S. Cl.
CPC ...
H05B 33/0887 (2013.01); H05B 33/083 (2013.01); H05B 33/0815 (2013.01); Y02B 20/341 (2013.01);
Abstract

A device for protecting a low voltage LED direct driver comprises a rectifying stage, a major string, a minor string, a high voltage NFE, a pull-up resistor, and an avalanche unit (zener diode or equivalent component). The high voltage NFET has a gate, a drain and a source. The drain of the high voltage NFET is connected to a bottom end of the major string, the source of the high voltage NFET is connected to a top of the minor string. The pull-up resistor is connected between the gate of the high voltage NFET. The avalanche unit has a first end and a second end. The first end of the avalanche unit is connected to the gate of the high voltage NFET and the pull-up resistor. High voltage NFET is placed just above the low voltage LED direct driver and biased, which provides excellent voltage protection for the low voltage LED direct driver.


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