The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Feb. 26, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ahmed Abdel Monem Youssef, San Diego, CA (US);

Prasad Srinivasa Siva Gudem, San Diego, CA (US);

Eugene Robert Worley, Irvine, CA (US);

Dongling Pan, San Diego, CA (US);

Li-Chung Chang, Irvine, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/523 (2013.01); H03F 3/193 (2013.01); H03F 3/211 (2013.01); H03F 2200/294 (2013.01); H03F 2200/441 (2013.01); H03F 2200/444 (2013.01); H03F 2200/451 (2013.01); H03F 2200/489 (2013.01); H03F 2203/21106 (2013.01);
Abstract

A CMOS amplifier including electrostatic discharge (ESD) protection circuits is disclosed. In one embodiment, the CMOS amplifier may include a PMOS transistor, a NMOS transistor, primary protection diodes, and one or more auxiliary protection diodes to limit a voltage difference between terminals of the CMOS amplifier. In some embodiments, the auxiliary protection diodes may limit the voltage difference between an input terminal of the CMOS amplifier and a supply voltage, the input terminal of the CMOS amplifier and ground, and the input terminal and the output terminal of the CMOS amplifier.


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