The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Jun. 05, 2015
Applicants:

Steven E. Koenck, Cedar Rapids, IA (US);

Robert G. Brown, Tustin, CA (US);

David W. Jensen, Marion, IA (US);

Inventors:

Steven E. Koenck, Cedar Rapids, IA (US);

Robert G. Brown, Tustin, CA (US);

David W. Jensen, Marion, IA (US);

Assignee:

Rockwell Collins, Inc., Cedar Rapids, IA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/00 (2006.01); H01S 5/10 (2006.01); H01S 5/32 (2006.01); H01S 5/30 (2006.01); H01S 5/042 (2006.01); G01J 1/04 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01S 5/105 (2013.01); G01J 1/0459 (2013.01); H01L 27/14625 (2013.01); H01L 27/14685 (2013.01); H01S 5/0425 (2013.01); H01S 5/1078 (2013.01); H01S 5/3013 (2013.01); H01S 5/32 (2013.01);
Abstract

An optical amplifier includes a plurality of photon amplifying regions. Each photon amplifying region includes a bottom electrode, an insulating layer formed over the bottom electrode, and having a through hole to the bottom electrode, a semiconductor layer and a top electrode formed over the semiconductor layer, wherein the top and bottom electrodes electrically contact the semiconductor layer. The semiconductor layer is formed over the insulating layer and in the through hole, and has a semiconductor active region in the through hole. The semiconductor active region has a direct electronic band gap with a conduction band edge, and is embedded within a photonic crystal having an electromagnetic band gap having photon energies overlapping the energy of the conduction band edge of the electronic band gap such that spontaneous emission of photons in the semiconductor active region is suppressed.


Find Patent Forward Citations

Loading…