The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Nov. 23, 2015
Applicant:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, CN;
Inventors:
Xiaojian Mao, Shanghai, CN;
Baoyan Chai, Shanghai, CN;
Long Zhang, Shanghai, CN;
Benxue Jiang, Shanghai, CN;
Qiang Yuan, Shanghai, CN;
Junxi Xie, Shanghai, CN;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/42 (2006.01); C04B 35/645 (2006.01); C04B 35/547 (2006.01);
U.S. Cl.
CPC ...
H01Q 1/42 (2013.01); C04B 35/547 (2013.01); C04B 35/6455 (2013.01);
Abstract
A method for producing infrared ZnS domes comprises forming green body by CIP and sintering by hot pressing. In the present invention, the pressure transfers through inert particles hence distributes uniformly while the shape of the dome is controlled by a lower punch head. The ZnS ceramic domes produced by the method of the present invention are of uniform infrared properties with high yield.