The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Feb. 24, 2012
Applicants:

Julian Burschka, St-Sulpice, CH;

Florian Kessler, Höchstadt an der Aisch, DE;

Etienne Baranoff, Birmingham, GB;

Mohammad Khaja Nazeeruddin, Ecublens, CH;

Michael Graetzel, St-Sulpice, CH;

Inventors:

Julian Burschka, St-Sulpice, CH;

Florian Kessler, Höchstadt an der Aisch, DE;

Etienne Baranoff, Birmingham, GB;

Mohammad Khaja Nazeeruddin, Ecublens, CH;

Michael Graetzel, St-Sulpice, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 2/16 (2006.01); H01L 51/42 (2006.01); C09K 9/02 (2006.01); C09K 11/06 (2006.01); H01L 51/00 (2006.01); H01M 4/60 (2006.01); H01M 4/62 (2006.01); H01M 10/05 (2010.01); H01M 6/14 (2006.01); H01M 10/42 (2006.01); H01L 51/50 (2006.01); H01G 9/20 (2006.01);
U.S. Cl.
CPC ...
H01L 51/42 (2013.01); C09K 9/02 (2013.01); C09K 11/06 (2013.01); H01L 51/002 (2013.01); H01L 51/0083 (2013.01); H01L 51/50 (2013.01); H01M 4/60 (2013.01); H01M 4/624 (2013.01); H01M 6/14 (2013.01); H01M 10/05 (2013.01); H01M 10/4235 (2013.01); C09K 2211/1029 (2013.01); C09K 2211/1044 (2013.01); C09K 2211/187 (2013.01); H01G 9/2018 (2013.01); H01G 9/2031 (2013.01); H01G 9/2059 (2013.01); H01G 9/2095 (2013.01); H01L 51/4226 (2013.01); H01L 51/5032 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); Y02E 10/549 (2013.01);
Abstract

The invention relates to electrochemical devices comprising complexes of cobalt comprising at least one ligand with a 5- or six membered, N-containing heteroring. The complex are useful as p- and n-dopants, as over of electrochemical devices, in particular in organic semiconductors. The complexes are further useful as over-discharge prevention and overvoltage protection agents.


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