The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Aug. 29, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hiroyuki Ode, Yokkaichi, JP;
Takeshi Yamaguchi, Yokkaichi, JP;
Takeshi Takagi, Yokkaichi, JP;
Toshiharu Tanaka, Yokkaichi, JP;
Masaki Yamato, Yokkaichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
In accordance with an embodiment, a resistive random access memory device includes a substrate, first and second wiring lines, and a storage cell. The first and second wiring lines are disposed on the substrate so as to intersect each other. The storage cell is disposed between the first and second wiring lines at the intersection of the first and second wiring lines and includes a first electrode, a resistive switching film on the first electrode, a second electrode on the resistive switching film, and a tantalum oxide (TaO) layer. The first electrode is electrically connected to the first wiring line. The second electrode is electrically connected to the second wiring line. The tantalum oxide (TaO) layer is disposed between the first electrode and the resistive switching film and is in contact with the resistive switching film.